供应链
Lifecycle StatusProduction (Last Updated: 22 hours ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 22 hours ago)
描述
由其分销商提供的 Texas Instruments CSD85302L 的描述。
Transistor MOSFET Array Dual N-CH 20V 7A 4-Pin LGA T/R
20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro 4-PICOSTAR -55 to 150
1.7W 10V 7.8nC@ 4.5V 2individualNChannel PICOSTAR-4 SMD mount 1.35mm*1.35mm*220μm
MOSFET 2N-CH 20V 5A / 20 V Dual N-Channel NexFET Power MOSFET
20V, N ch NexFET MOSFET dual common source SON3x3, 14mOhm
Power Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
Texas Instruments 在全球拥有多个品牌，分销商可将其用作替代名称。Texas Instruments 也可称为以下名称：
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TI Texas Instruments
- TEXAS INSTRUM
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技术规格
Physical
Case/PackageLGA
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)7 A
Fall Time99 ns
Gate to Source Voltage (Vgs)10 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Operating Temperature-55 °C
Number of Channels2
PackagingTape & Reel (TR)
Power Dissipation1.7 W
Rise Time54 ns
Schedule B8541290080
Turn-Off Delay Time173 ns
Turn-On Delay Time37 ns
Dimensions
Height220 µm
Length1.35 mm
Thickness200 µm
Width1.35 mm