供应链
Lifecycle StatusProduction (Last Updated: 7 hours ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 7 hours ago)
工程资源
查看 Texas Instruments CSD18537NKCS 的评估工作包和参考设计。
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N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a TO-220 package
描述
由其分销商提供的 Texas Instruments CSD18537NKCS 的描述。
60-V, N channel NexFET™ power MOSFET, single TO-220, 14 mOhm 3-TO-220 -55 to 175
Trans MOSFET N-CH Si 60V 50A 3-Pin(3+Tab) TO-220 Tube
N-Ch MOSFET 60V 50A 94W(Tc) 14mΩ@25A,10V Qg=18nC@10V Ciss=1.48nF@30V Vgs=3.5V@250µA TO-220-3 TH 10.67mm × 4.7mm × 16.51mm
Power Field-Effect Transistor, 56A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
制造商别名
Texas Instruments 在全球拥有多个品牌，分销商可将其用作替代名称。Texas Instruments 也可称为以下名称：
- TI
- TEXAS
- TEXAS INST
- TEXAS INSTR
- TEXAS INSTRUMENT
- TEXAS INSTRUMENTS INC
- TEXAS INS
- TEXAS INSTRU
- TEXAS INSTRUMEN
- TI/NS
- TEX
- Texas Instruments (TI)
- TEXASIN
- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
- TEAXS
- TEXASI
- TI Texas Instruments
- TEXAS INSTRUM
- TEXAS USD
- TEXAS INSRUMENTS
- TEXAS INSRUMENT
- TEXAS INSTUMENTS
- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
技术规格
Physical
Case/PackageTO-220
Contact PlatingCopper, Tin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)54 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vds)60 V
Element ConfigurationSingle
Fall Time3.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.48 nF
Max Operating Temperature150 °C
Max Power Dissipation79 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation79 W
Rds On Max14 mΩ
Rise Time3.2 ns
Turn-Off Delay Time12.6 ns
Turn-On Delay Time4.5 ns
Dimensions
Height4.7 mm
Length10.16 mm
Thickness4.58 mm
Width8.7 mm