MOSFET, N DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:10.4A; Row Pitch:7.62mm; Termination Type:Through Hole