描述
由其分销商提供的 STMicroelectronics VNP10N07-E 的描述。
VNP10N07 Series 18 V 10 A 100 mOhm Fully Autoprotected Power Mosfet - TO-220AB
Current Limit SW 1-IN 1-OUT to 18V 120A Automotive 3-Pin(3+Tab) TO-220AB Tube
Tube VNP10N Current Limiting (Fixed) Over Temperature Over Voltage On/Off power distribution switch 10.4mm 70V 100ns 10A
MOSFET OMNIFET 70V 10A TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 70V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dis
Mosfet, N Channel, 70V, 5A, To-220-3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:5A; Tensión Drenaje-Fuente Vds:70V; Resistencia De Activación Rds(On):100Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics VNP10N07-E
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)14 A
Current10 A
Drain to Source Breakdown Voltage70 V
Drain to Source Resistance100 mΩ
Drain to Source Voltage (Vdss)70 V
Max Operating Temperature150 °C
Max Output Current10 A
Max Power Dissipation50 W
Max Supply Current500 µA
Max Supply Voltage70 V
Min Operating Temperature-40 °C
Nominal Supply Current250 µA
Number of Channels1
Number of Elements1
Number of Outputs1
Operating Supply Voltage18 V
Output Current7 A
Output Voltage70 V
Power Dissipation50 W
Resistance100 mΩ
Schedule B8542390000
Threshold Voltage3 V
Turn-Off Delay Time400 ns
Turn-On Delay Time100 ns
Voltage70 V
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm