供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
STMicroelectronicsSTW10NK80Z
N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package
描述
由其分销商提供的 STMicroelectronics STW9NK90Z 的描述。
N-Channel 900 V 1.3 Ohm Flange Mount SuperMESH Power Mosfet - TO-247
N-CHANNEL 900V - 1.1 OHM - 8A TO-247 ZENER PROTECTED SUPERMESH MOSFET
STW9NK90Z N-CHANNEL MOSFET TRANSISTOR, 8 A, 900 V, 3-PIN TO-247
N-CHANNEL 900V-1.1OHM-8A-TO-247 ZENER-PROTECTED SUPERMESHTM MOSFET Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=900 V, 8 A, TO-247encapsulation, Through hole mounting, 3Pin
MOSFET, N TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation P
The SuperMESH(TM) series is obtained through an extreme optimization of ST's well established strip-based PowerMESH(TM) layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.115 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max1.3 Ω
Resistance1.3 Ω
Rise Time13 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)900 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm