描述
由其分销商提供的 STMicroelectronics STW65N045M9-4 的描述。
N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET in a TO247-4 package
N-Ch MOSFET 650V 54A 312W 30V 80nC@10V 45mΩ@10V 4.61nF@400V TO-247-4 TH
Power Field-Effect Transistor, 54A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247
其他, MOSFET，N-CH，650V，54A，TO-247;
N-CHANNEL 650 V, 39 MOHM TYP., 5
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals4
Technical
Continuous Drain Current (ID)54 A
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vds)650 V
Max Operating Temperature150 °C
Max Power Dissipation312 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1