STMicroelectronics STW58N65DM2AG

Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
$ 6.98
Production
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价格与库存

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DistributorSKUMinPkg
NewarkSTW58N65DM2AG4411
TME
2
STW58N65DM2AG01
18h
AvnetSTW58N65DM2AG0600
7h
Future ElectronicsSTW58N65DM2AG0600Tube
Arrow ElectronicsSTW58N65DM2AG0600

数据表和文档

下载 STMicroelectronics STW58N65DM2AG 的数据表和制造商文档。

STMicroelectronics

Datasheet12 页10 年前

Farnell

库存历史记录

3 个月趋势:
+0.00%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-09-15
Lifecycle StatusProduction (Last Updated: 2 months ago)

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描述

由其分销商提供的 STMicroelectronics STW58N65DM2AG 的描述。

Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
STMicroelectronics
Trans MOSFET N-CH 650V 48A Automotive 3-Pin(3+Tab) TO-247 Tube
Verical
N Channel 650 V 48 A 360 W 68 mOhm Surface Mount Power Mosfet - TO-247
Future Electronics
Hv Mosfet Mdmesh |Stmicroelectronics STW58N65DM2AG
Newark
360W(Tc) 25V 5V@ 250¦ÌA 88nC@ 10 V 1N 650V 65m¦¸@ 24A,10V 48A 4.1nF@100V TO-247-3 20.15mm*15.75mm*5.15mm
UnikeyIC
场效应管, MOSFET, N沟道, 650V, 48A, TO247;
element14 APAC
Automotive Power Discrete, 650V, 48A, TO-247, Tube
STMicroelectronics SCT
MOSFET, N-CH, 650V, 48A, TO247; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Farnell

图片

element14 APAC
Lanka Micro
UTSource

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics