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MOSFET N-CH 600V 34A TO247 / N-Channel 600 V 34A (Tc) 250W (Tc) Through Hole TO-247-3
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描述
由其分销商提供的 STMicroelectronics STW37N60DM2AG 的描述。
MOSFET N-CH 600V 28A TO247 / N-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-247-3
Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package
Power Field-Effect Transistor, 28A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N-CH, 600V, 28A, TO247; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)28 A
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)600 V
Input Capacitance2.4 nF
Max Operating Temperature150 °C
Max Power Dissipation210 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation210 W
Rds On Max110 mΩ