相关零件
STMicroelectronicsSTW20NK50Z
N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected TO-247
描述
由其分销商提供的 STMicroelectronics STW20NM50FD 的描述。
N-Channel 500V - 0.22Ohm - 20A - TO-247 FDmesh(TM) POWER MOSFET (with FAST DIODE)
500 V 0.22 OHM 20 A TO-247 N CHANNEL FDMESH POWER MOSFET (WITH FAST DIODE) Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.38 nF
Max Operating Temperature150 °C
Max Power Dissipation214 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation214 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-On Delay Time22 ns
Voltage Rating (DC)500 V
Dimensions
Height6.35 mm
Length38.1 mm
Width19.05 mm