供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-06-27
LTD Date2011-12-27
描述
由其分销商提供的 STMicroelectronics STW14NM65N 的描述。
12 A 650 V 0.38 ohm N-CHANNEL Si POWER MOSFET TO-247
MOSFET N-CH 650V 12A TO247-3
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max380 mΩ
Resistance380 mΩ
Rise Time13 ns
Turn-Off Delay Time55 ns