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描述
由其分销商提供的 STMicroelectronics STW12N120K5 的描述。
N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package
Power MOSFET, N Channel, 1.2 kV, 12 A, 0.62 ohm, TO-247, Through Hole
Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247 Tube
Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STW12N120K5
1200 V 0.69 ohm N-CHANNEL Si POWER MOSFET TO-247
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N-CH 1200V 12A 690mOhm TO247-3
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Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Power MOSFETs, 1200V, 12A, TO-247, Tube
STMicroelectronics SCT
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.37 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingRail/Tube
Power Dissipation250 W
Rds On Max690 mΩ
Schedule B8541290080
Turn-Off Delay Time68.5 ns
Turn-On Delay Time23 ns
Dimensions
Height24.45 mm