供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-11-07
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2021-01-10
LTD Date2021-07-10
相关零件
InfineonIPU80R1K0CEBKMA1
MOSFET N-CH 800V 5.7A TO251-3 N-Channel 800 V 5.7A (Tc) 83W (Tc) Through Hole PG-TO251-3
InfineonIPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251 / N-Channel 650 V 4.3A (Tc) 37W (Tc) Through Hole TO-251
描述
由其分销商提供的 STMicroelectronics STU6N65K3 的描述。
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in IPAK package
Trans MOSFET N-CH 650V 5.4A 3-Pin TO-251 Tube
Dfd Thyr Triac & Rectifier |Stmicroelectronics STU6N65K3
Power Field-Effect Transistor, 5.4A I(D), 650V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.4 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vds)650 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance880 pF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max1.3 Ω
Rise Time10 ns
Turn-Off Delay Time44 ns
Turn-On Delay Time14 ns