相关零件
STMicroelectronicsSTD7NM80-1
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package
描述
由其分销商提供的 STMicroelectronics STU5N95K3 的描述。
N-channel 950 V, 3 Ohm, 4 A Zener-protected SuperMESH3(TM) Power MOSFET in IPAK package
STU5N95K3 N-channel MOSFET Transistor, 4 A, 950 V, 3-Pin TO-251
Power Field-Effect Transistor, 4A I(D), 950V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 950V, 4A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 950V; On Resistance Rds(on): 3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-251
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage950 V
Drain to Source Resistance3.5 Ω
Drain to Source Voltage (Vdss)950 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance460 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage950 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max3.5 Ω
Rise Time7 ns
Threshold Voltage4 V
Turn-Off Delay Time32 ns
Turn-On Delay Time17 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm