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描述
由其分销商提供的 STMicroelectronics STT818B 的描述。
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin
30V 1.2W 3A 100@2.5A3V 210mV@2A20mA PNP +150¡Í@(Tj) SOT-23-6 Bipolar Transistors - BJT ROHS
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500mV@20mA 2A PNP 1.2W 5V 100nA 30V 30V 3A SOT-23-6L SMD 3.05mm × 1.75mm × 1.3mm
Power Bipolar, PNP, 3V, 20mA, SOT23-6L, Tape and Reel
STMicroelectronics SCT
Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain
TRANSISTOR, NPN, 80V, 1A, SOT-23-6L; Transistor Type:Bipolar; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:-30V; Current Ic Continuous a Max:-2A; Voltage, Vce Sat Max:-0.15V; Power Dissipation:1.2W; Min Hfe:100; Case Style:SOT-23; Termination Type:SMD; Current Ic Max:6A; Current Ic av:3A; Current Ic hFE:100mA; Current, Ic Sat:-0.5A; Power, Ptot:1.2W; SMD Marking:818B; Transistors, No. of:1; Voltage, Vcbo:-30V
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating-3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Breakdown Voltage30 V
Max Collector Current3 A
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation1.2 W
Voltage Rating (DC)-30 V
Dimensions
Height1.3 mm
Length3.05 mm
Width1.75 mm