供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2010-09-30
LTD Date2011-03-30
描述
由其分销商提供的 STMicroelectronics STS25NH3LL 的描述。
N-CHANNEL 30V - 0.0032 OHM - 25A SO-8 STripFET III MOSFET FOR DC-DC CONVERSION
MOSFET, POWER, N-CH, VDSS 30V, RDS(ON) 0.0032OHM, ID 25A, SO-8,PD 3.2W, VGS+/-18V,-55C
3.2W(Tc) 18V 1V@ 250µA 40nC@ 4.5 V 1individualNChannel 30V 3.5mΩ@ 12.5A,10V 25A 4.45nF@25V SOIC-8 SMD mount 5mm*4mm*1.65mm
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):0.0035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)25 A
Current Rating25 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)18 V
Input Capacitance4.45 nF
Max Operating Temperature175 °C
Max Power Dissipation3.2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation3.2 W
Rds On Max3.5 mΩ
Resistance3.5 MΩ
Rise Time50 ns
Threshold Voltage1 V
Turn-Off Delay Time75 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)30 V
Dimensions
Height1.25 mm
Length5 mm
Width4 mm