供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-10-27
LTD Date2012-04-27
相关零件
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N-Channel 30V - 0.0056Ohm - 90A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
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描述
由其分销商提供的 STMicroelectronics STP90N4F3 的描述。
N-channel 40V - 5.4m Ohm - 80A - DPAK - TO-220 - IPAK
Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 80A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
FIXED IND 390UH 50MA 22 OHM SMD
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance6.2 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max6.5 mΩ
Resistance6.2 MΩ
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time40 ns