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300W 20V 3V 137nC@ 10V 1N 120V 4.8m¦¸@ 10V 100A 9.03nF@ 60V TO-220 10mm*4.4mm*15.65mm
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Power MOSFET, N Channel, 120 V, 100 A, 0.0065 ohm, TO-220, Through Hole
描述
由其分销商提供的 STMicroelectronics STP80NF12 的描述。
STP80NF12 N-CHANNEL MOSFET TRANSISTOR, 80 A, 120 V, 3-PIN TO-220
N-CHANNEL 120V-0.013 OHM-80A TO-220 STripFET II MOSFET
Trans MOSFET N-CH 120V 80A 3-Pin(3+Tab) TO-220AB Tube
N-Channel 120 V 18 mO 140 nC Flange Mount STripFET II Power Mosfet - TO-220
80 A 120 V 0.018 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage120 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)120 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.3 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max18 mΩ
Resistance18 mΩ
Rise Time145 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time134 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)120 V
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm