供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-09
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2016-02-04
LTD Date2016-08-04
描述
由其分销商提供的 STMicroelectronics STP7N52DK3 的描述。
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in TO-220FP package
MOSFET N-CH 525V 6A TO220AB / N-Channel 525 V 6A (Tc) 90W (Tc) Through Hole TO-220
Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 525V, 6A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:525V; On Resistance Rds(on):0.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:90W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance1.15 Ω
Drain to Source Voltage (Vdss)525 V
Element ConfigurationSingle
Fall Time4.2 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance870 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage525 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max1.15 Ω
Resistance1.15 Ω
Rise Time33 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time37 ns
Turn-On Delay Time12 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm