价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STP5N62K3 | 0 | 5 | 1d | ||||||||
| Microchip USA | STP5N62K3 | 2,403 | 3500 | Tray | 23h | |||||||
| Win Source | WS-STP5N62K3 | 5,000 | 23 | 7h | ||||||||
| Worldway Electronics | STP5N62K3 | 23,589 | 7 | Tube | 6h | |||||||
| GreenTree Electronics | STP5N62K3 | 350 | 1d |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-02-04
LTD Date2016-08-04
描述
由其分销商提供的 STMicroelectronics STP5N62K3 的描述。
N-channel 620 V, 1.28 Ohm typ., 4.2 A SuperMESH3(TM) Power MOSFET in TO-220 package
STP5N62K3 N-channel MOSFET Transistor, 4.2 A, 620 V, 3-Pin TO-220
Trans MOSFET N-CH 620V 4.2A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 4.2A, TO 220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):1.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.2 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max1.6 Ω
Resistance1.6 Ω
Rise Time8 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time40 ns
Turn-On Delay Time12 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm