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STMicroelectronicsSTP6N120K3
N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package
描述
由其分销商提供的 STMicroelectronics STP3N150 的描述。
N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-220 package
STMicroelectronics N channel PowerMESH MOSFET, 1500 V, 2.5 A, TO-220, STP3N150
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N Channel, 1.5Kv, 2.5A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:1.5Kv; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:-Rohs Compliant: Yes |Stmicroelectronics STP3N150.
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage1.5 kV
Drain to Source Resistance9 Ω
Drain to Source Voltage (Vdss)1.5 kV
Element ConfigurationSingle
Fall Time61 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance939 pF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage1.5 kV
Min Operating Temperature-50 °C
Number of Elements1
Power Dissipation140 W
Rds On Max9 Ω
Resistance9 Ω
Rise Time47 ns
Threshold Voltage4 V
Turn-Off Delay Time45 ns
Turn-On Delay Time24 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm