STMicroelectronics STP33N60M2

N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
$ 1.9
Production
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
NewarkSTP33N60M21,2741
Arrow ElectronicsSTP33N60M27,1501K
VericalSTP33N60M27,0001K
TME
2
STP33N60M2531
7h
DigiKey497-14221-5-ND2641Tube

数据表和文档

下载 STMicroelectronics STP33N60M2 的数据表和制造商文档。

ODG (Origin Data Global)

Datasheet19 页13 年前

Future Electronics

库存历史记录

3 个月趋势:
+0.75%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-13
Lifecycle StatusProduction (Last Updated: 1 month ago)

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描述

由其分销商提供的 STMicroelectronics STP33N60M2 的描述。

N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-220 package
STMicroelectronics
190W(Tc) 25V 4V@ 250¦ÌA 45.5nC@ 10 V 1N 600V 125m¦¸@ 13A,10V 26A 1.781nF@100V TO-220 9.15mm
Unikeyic (ICkey)
Single N-Channel 650 V 0.125 O 190 W Flange Mount Power Mosfet - TO-220-3
Future Electronics
Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
Mosfet, N-Ch, 600V, 26A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:26A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STP33N60M2
Newark

图片

element14 APAC
TME
Lanka Micro
Future Electronics

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics