描述
由其分销商提供的 STMicroelectronics STP24NF10 的描述。
Transistor MOSFET Negative Channel 100 Volt 26A 3-Pin(3+Tab) TO-220 Tube
N-Channel 100V - 0.055Ohm - 26A - TO-220 LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
Power MOSFET, N Channel, 100 V, 26 A, 0.055 ohm, TO-220, Through Hole
26 A 100 V 0.06 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 26A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 26A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)26 A
Current Rating26 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation85 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time45 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time50 ns
Turn-On Delay Time60 ns
Voltage Rating (DC)100 V
Dimensions
Height19.68 mm
Length10.4 mm
Width4.6 mm