供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-03-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-09-30
LTD Date2019-03-30
相关零件
STMicroelectronicsSTP120NF10
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-220 package
InfineonIPP045N10N3GXKSA1
100V 100A 4.5m´Î@10V100A 214W 3.5V@150Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
描述
由其分销商提供的 STMicroelectronics STP130N10F3 的描述。
N-channel 100 V, 8 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMICROELECTRONICS STP130N10F3 MOSFETS
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9.6 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time7.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.305 nF
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Rds On Max9.6 mΩ
Resistance9.6 MΩ
Rise Time38 ns
Schedule B8541290080
Turn-Off Delay Time52 ns
Turn-On Delay Time17 ns