供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-30
Lifecycle StatusProduction (Last Updated: 3 months ago)
相关零件
InfineonBSP89H6327XTSA1
MOSFET N-CH 240V 350MA SOT223-4 N-Channel 240 V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
InfineonBSP297H6327XTSA1
MOSFET N-CH 200V 660MA SOT223-4 N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
描述
由其分销商提供的 STMicroelectronics STN4NF20L 的描述。
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package
Power MOSFET, N Channel, 200 V, 1 A, 1.1 ohm, SOT-223, Surface Mount
Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R
200 V, 1 A, 1.1 OHM, SOT-223 LOW GATE CHARGE STRIPFET II N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 1A I(D), 200V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
3.3W(Tc) 20V 3V@ 250µA 0.9nC@ 10 V 1individualNChannel 200V 1.5Ω@ 500mA,10V 1A 150pF@25V SOT-223 SMD mount 6.5mm*3.5mm*1.9mm
MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: StripFET II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.55 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time10.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance150 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.3 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation3.3 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2 V
Dimensions
Height1.9 mm