供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-30
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
Diodes Inc.DMN10H099SFG-7
Mosfet, N-Ch, 100V, 4.2A, Powerdi 3333 Rohs Compliant: Yes |Diodes Inc. DMN10H099SFG-7
描述
由其分销商提供的 STMicroelectronics STL3N10F7 的描述。
N-channel 100 V, 0.062 Ohm typ., 4 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package
Power MOSFET, N Channel, 100 V, 4 A, 70 Milliohms, PowerFLAT, 6 Pins, Surface Mount
Trans MOSFET N-CH 100V 4A 6-Pin Power Flat EP T/R
Lv Mosfet Trench |Stmicroelectronics STL3N10F7
Power Field-Effect Transistor, 4A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power MOSFETs, 100V, 4A, PowerFLAT 2x2, Tape and Reel
STMicroelectronics SCT
MOSFET N-CH 100V 4A POWERFLAT22
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance408 pF
Max Operating Temperature150 °C
Max Power Dissipation2.4 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Rds On Max70 mΩ
Resistance62 mΩ
Rise Time3 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time6.3 ns