价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STL22N65M5 | 60 | 1 | Cut Tape | ||||||||
| Verical | STL22N65M5 | 3,000 | 3K | |||||||||
| Arrow Electronics | STL22N65M5 | 3,000 | 3K | |||||||||
| TME | STL22N65M5 | 0 | 1 | 21h | ||||||||
| Avnet | STL22N65M5 | 0 | 3K | 7h |
相关零件
STMicroelectronicsSTB20N65M5
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
STMicroelectronicsSTD18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in DPAK package
STMicroelectronicsSTB18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in D2PAK package
描述
由其分销商提供的 STMicroelectronics STL22N65M5 的描述。
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT 8x8 HV package
STL22N65M5 N-channel MOSFET Transistor, 15 A, 710 V, 5-Pin PowerFLAT HV
Mosfet, N-Ch, 650V, 15A, Powerflat Hv Rohs Compliant: Yes |Stmicroelectronics STL22N65M5
2.8W(Ta),110W(Tc) 25V 5V@ 250¦ÌA 36nC@ 10 V 1N 650V 210m¦¸@ 8.5A,10V 15A 1.345nF@100V
Low gate input resistance | MOSFET N CH 650V 15A PWRFLT8X8HV
Trans MOSFET N-CH Si 650V 15A 4-Pin Power Flat EP T/R
Power Field-Effect Transistor, 15A I(D), 650V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Ch 650V .198Ohm 15A MDmesh M5
Power MOSFETs, 650V, 15A, PowerFLAT 8x8 HV, Tape and Reel
STMicroelectronics SCT
N-CH 650V 15A 210mOhm PwFLAT8x8
MOSFET, N-CH, 650V, 15A, POWERFLAT HV;
MOSFET N CH 650V 15A PWRFLT8X8HV
STMICROELECTRONICS STL22N65M5 MOSFETS
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins5
Number of Terminals4
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance210 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time7.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.345 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max220 mΩ
Resistance210 MΩ
Rise Time7.5 ns
Turn-Off Delay Time43 ns
Turn-On Delay Time43 ns
Dimensions
Height950 µm
Length8 mm
Width8 mm