价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | STL20DN10F7 | 223 | 3K | Tray | 14h | |||||||
| Win Source | WS-STL20DN10F7 | 20 | 40 | 21h | ||||||||
| Worldway Electronics | STL20DN10F7 | 6,941 | 7 | Tape & Reel | 20h | |||||||
| Aztech | STL20DN10F7 | 5,377 | 16h | |||||||||
| SHENGYU ELECTRONICS | STL20DN10F7 | 13,112 | 1 | 4d |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-11-19
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2020-10-02
LTD Date2021-04-02
相关零件
STMicroelectronicsSTD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
onsemiNVD6495NLT4G
N-Channel Logic Level Power MOSFET 100V, 25A, 50mΩ Automotive Power MOSFET 100V Logic Level
描述
由其分销商提供的 STMicroelectronics STL20DN10F7 的描述。
Transistor MOSFET Array Dual N-CH 100V 20A 8-Pin PowerFLAT T/R
N-Channel 100 V 5 A 67 mOhm STripFET VII DeepGATE Power Mosfet - PFLAT5x6
Dual N-channel 100 V, 0.065 Ohm typ., 5 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island
Trans MOSFET N-CH 100V 20A 8-Pin Power Flat T/R
Cap Film 0.0022uF 2000V PP 5% (26.5 X 6 X 15mm) Radial 22.5mm 100C Bulk
Power MOSFETs, 100V, 5A, PowerFLAT 5x6 double island, Tape and Reel
STMicroelectronics SCT
Power Field-Effect Transistor, 12.3A I(D), 100V, 0.067ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 2N-CH 100V 20A PWRFLAT56
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals6
Technical
Continuous Drain Current (ID)12.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance67 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance408 pF
Max Operating Temperature150 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Rds On Max80 mΩ
Resistance65 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time11 ns
Turn-On Delay Time6.3 ns