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描述
由其分销商提供的 STMicroelectronics STI10NM60N 的描述。
N-channel 600 V, 0.53 Ohm, 10 A, I2PAK MDmesh(TM) II Power MOSFET
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) I2PAK Tube
MOSFET N-CH 600V 10A I2PAK
Power Field-Effect Transistor, 10A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
I2PAK MFET 600V 0.55OHM
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance540 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max550 mΩ
Rise Time12 ns
Turn-Off Delay Time32 ns
Turn-On Delay Time10 ns