价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-16976-ND | 526 | 1 | Tube | ||||||||
| TME | STGYA120M65DF2 | 0 | 1 | 9h | ||||||||
| Avnet | STGYA120M65DF2 | 0 | 600 | 3d | ||||||||
| Future Electronics | STGYA120M65DF2 | 0 | 30 | Tube | ||||||||
| Arrow Electronics | STGYA120M65DF2 | 0 | 600 |
描述
由其分销商提供的 STMicroelectronics STGYA120M65DF2 的描述。
Trench gate field-stop IGBT, M series 650 V, 120 A low loss
Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) Max247 Tube
TRENCH GATE FIELD-STOP IGBT, M S / IGBT NPT, Trench Field Stop 650 V 160 A 625 W Through Hole MAX247™
Insulated Gate Bipolar Transistor, 160A I(C), 650V V(BR)CES, N-Channel
Short-circuit rugged IGBT, Max247 long leads, Tube
STMicroelectronics SCT
IGBT 650V 120A 1,95V TO-247MAXL
Igbt |Stmicroelectronics STGYA120M65DF2
IGBT Transistors PTD IGBT & IPM
625W 1.65V 650V 160A MAX-247-3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)650 V
Forward Current120 A
Forward Voltage1.9 V
Max Collector Current160 A
Max Operating Temperature175 °C
Max Power Dissipation625 W
Min Operating Temperature-55 °C
Number of Elements1