STMicroelectronics STGY40NC60VD

Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube
$ 3.45
Obsolete
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
DigiKey497-6736-5-ND3001Tube
TME
2
STGY40NC60VD141
13h
Future ElectronicsSTGY40NC60VD0600Tube
AvnetSTGY40NC60VD0600
3d
FarnellSTGY40NC60VD01
2h

数据表和文档

下载 STMicroelectronics STGY40NC60VD 的数据表和制造商文档。

Newark

Datasheet14 页19 年前

Future Electronics

Verical

iiiC

Farnell

库存历史记录

3 个月趋势:
-4.44%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 STMicroelectronics STGY40NC60VD 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-12-19
LTD Date2026-06-19

相关零件

STMicroelectronicsSTGW30NC60VD
Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL
详细信息
InfineonIRGP35B60PDPBF
IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC
详细信息
InfineonIRG4PC50FDPBF
IRG4PC50FDPbF Series 600 V 39 A N-Channel Fast CoPack IGBT - TO-247AC
详细信息
onsemiFGH40N60SMD-F085
Trans IGBT Chip N-CH 600V 80A 349W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
详细信息
InfineonIRGP35B60PD-EP
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247AD
详细信息
STMicroelectronicsSTGW40NC60KD
Trans IGBT Chip N-CH 600V 70A 250000mW 3-Pin(3+Tab) TO-247 Tube
详细信息

描述

由其分销商提供的 STMicroelectronics STGY40NC60VD 的描述。

Trans IGBT Chip N-CH 600V 80A 260000mW 3-Pin(3+Tab) Max247 Tube
Verical
STMICROELECTRONICS STGY40NC60VD IGBT Single Transistor, 80 A, 2.5 V, 260 W, 600 V, MAX-247, 3 Pins
Utmel Electronic
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
IHS
Transistor IGBT N-Ch 600V 80A Max247
RS (Formerly Allied Electronics)
260W 1.9V 600V 80A MAX-247-3 15.9mm*5.3mm*20.3mm
UnikeyIC
Max247-3 Pre-ordered Chips ROHS
Dasenic
IGBT, 600V, 40A, TO-247 MAX; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: MAX-247; No. of Pins: 3Pi
Farnell

图片

RS
Augswan
Lanka Micro
iiiC
UTSource
Farnell
Future Electronics

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics