描述
由其分销商提供的 STMicroelectronics STGWT40V60DF 的描述。
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
IGBT Trench gate,600V 40A/100 deg, TO-3P
16/32-Bits Micros |Stmicroelectronics STGWT40V60DF
STMICROELECTRONICS STGWT40V60DF
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation283 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation283 W
Reverse Recovery Time41 ns
Schedule B8541290080
Dimensions
Height26.7 mm
Length15.7 mm
Width5.7 mm