供应链
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-02-17
Lifecycle StatusProduction (Last Updated: 7 months ago)
描述
由其分销商提供的 STMicroelectronics STGWT30H60DFB 的描述。
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Transistor, Igbt, 600V, 60A, To-3P; |Stmicroelectronics STGWT30H60DFB
260W 60A 600V FS(Field Stop) TO-3P-3 IGBT Transistors / Modules ROHS
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube
STMicroelectronics IGBT, maximum 600 V, maximum 60 A
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
IGBT, 60 A, 1.55 V, 260 W, 600 V, TO-3P, 3 Pins
IGBT 600V 30A Trench Field-Stop TO-3P
RS APAC
IGBT Transistors PTD IGBT & IPM
晶体管, 晶体管, IGBT, 600V, 60A, TO-3P;
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.756003 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation260 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time53 ns
Dimensions
Height14.1 mm
Length15.8 mm
Width5 mm