由其分销商提供的 STMicroelectronics STGWA75H65DFB2 的描述。
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247
357W 115A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS
Trans IGBT Chip N-CH 650V 115A 357W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 115A I(C), 650V V(BR)CES, N-Channel, TO-247
Transistor IGBT Chip N-Channel 650V 75A 3-Pin TO-247 Tube
TRENCH GATE FIELD-STOP, 650 V, 7 / IGBT Trench Field Stop 650 V 115 A 357 W Through Hole TO-247 Long Leads
Short-circuit rugged IGBT, TO-247 long leads, Tube
STMicroelectronics SCT
晶体管, IGBT, 650V, 115A, 357W, TO-247LL;
IGBT Transistors PTD IGBT & IPM
IGBT TRENCH FS 650V 115A TO247
TO247 IGBT 75A 650V HB2 SERIES
TRENCH GATE FIELD-STOP, 650 V, 7
IGBT, SINGLE, 650V, 115A, TO-247LL; Continuous Collector Current:115A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:357W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes