供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-06-24
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
描述
由其分销商提供的 STMicroelectronics STGWA50M65DF2 的描述。
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 50 A low loss
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
Short-circuit rugged IGBT, TO-247 long leads, Tube
STMicroelectronics SCT
Discrete Diode 375W 1.65V 650V 80A TO-247 TH 15.8mm × 5mm × 21mm
TO-247-3 IGBT Transistors / Modules ROHS
Igbt |Stmicroelectronics STGWA50M65DF2
TRENCH GATE FIELD-STOP IGBT M SE
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Forward Current50 A
Forward Voltage1.85 V
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Elements1