供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-06-14
Lifecycle StatusProduction (Last Updated: 5 months ago)
描述
由其分销商提供的 STMicroelectronics STGWA40H65DFB2 的描述。
Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package
Ciiva
STGWA40H65 Series 650 V 72 A Trench Gate Field Stop IGBT - TO-247-3
Insulated Gate Bipolar Transistor, 72A I(C), 650V V(BR)CES, N-Channel, TO-247
TRENCH GATE FIELD-STOP 650 V 40 / IGBT Trench Field Stop 650 V 72 A 230 W Through Hole TO-247 Long Leads
Short-circuit rugged IGBT, TO-247 long leads, Tube
STMicroelectronics SCT
Transistor IGBT 650V 40A 3-Pin TO-247 Tube
TO-247-3 IGBT Transistors / Modules ROHS
STGWA40H65DFB2, IGBT Transistors
RS APAC
IGBT Transistors PTD IGBT & IPM
ROHS3Compliant IGBT Transistor
晶体管, IGBT, 650V, 72A, 175度 C, 230W;
TRENCH GATE FIELD-STOP 650 V 40
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current72 A
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Operating Temperature-55 °C
Number of Elements1