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描述
由其分销商提供的 STMicroelectronics STGWA40H120DF2 的描述。
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
TRENCH GATE IGBT TO247 PKG / Very fast recovery antiparallel diode
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Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247
Discrete IGBTs; STGWA40H120DF2; STMICROELECTRONICS; 1.2 kV; 80 A; 1.2 kV
Trench gate field-stop IGBT, TO-247 long leads, Tube
STMicroelectronics SCT
IGBT 1200V 40A 2,1V TO-247 long
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468W 2.1V 2.6V@ 15V,40A 80A TO-247-3 24.45mm
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.6 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Forward Current40 A
Forward Voltage3.9 V
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation468 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time488 ns