供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
相关零件
InfineonIRG7PH35UD-EP
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
InfineonIRG7PH35UDPBF
TUBE / 1200V Trench IGBT for Induction Cooking 50A COPAK-247 ;RoHS Compliant: Yes
描述
由其分销商提供的 STMicroelectronics STGWA25S120DF3 的描述。
Trench gate field-stop IGBT, S series 1200 V, 25 A low drop
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
STMICROELECTRONICS STGWA25S120DF3 IGBT, SINGLE, 1.2KV, 50A, TO-247-3
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247
Trench gate field-stop IGBT, TO-247 long leads, Tube
STMicroelectronics SCT
Igbt, Single, 1.2Kv, 50A, To-247-3; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGWA25S120DF3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)1.2 kV
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)1.2 kV
Forward Current25 A
Forward Voltage2.95 V
Max Collector Current50 A
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time265 ns