STMicroelectronics STGW60V60DF

Name: STMicroelectronics STGW60V60DF
Brand: STMicroelectronics
SKU: STGW60V60DF

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

$ 1.881

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Distributor		SKU		Min	Pkg
Newark		STGW60V60DF	1,261	1		5.620	4.920	3.510	3.040	3.040
Arrow Electronics		STGW60V60DF	15,510	600					1.706	1.706
Verical		STGW60V60DF	15,000	600					1.706	1.706
Future Electronics	2	STGW60V60DF	810	30	Tube			1.860	1.800	1.750
TME	2	STGW60V60DF	39	1		4.560	3.090	2.240	2.170	2.170	22h

数据表和文档

下载 STMicroelectronics STGW60V60DF 的数据表和制造商文档。

Newark

Datasheet16 页13 年前

Datasheet20 页13 年前

STMicroelectronics

Future Electronics

库存历史记录

3 个月趋势:

+18.55%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-01-15

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGW60V60DF 的描述。

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

STMicroelectronics

IGBT, SINGLE, 600V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pi

Farnell

Igbt, Single, 600V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:375W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGW60V60DF

Newark