STMicroelectronics STGW50H65DFB2-4

Name: STMicroelectronics STGW50H65DFB2-4
Brand: STMicroelectronics
SKU: STGW50H65DFB2-4

STGW50 Series 650 V 50 A Through Hole High Speed IGBT - TO-247-4

$ 2.213

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Distributor		SKU	Min
TME	2	STGW50H65DFB2-4	1	6.191*	4.802*	4.802*	4.802*	4.802*	17h
Newark		STGW50H65DFB2-4	1	6.430	5.660	4.110	3.600	3.600
Avnet		STGW50H65DFB2-4	600				2.002	1.891	6h
element14 APAC		STGW50H65DFB2-4	1	6.060*	3.508*	3.231*	2.678*	2.678*	17h
Farnell		STGW50H65DFB2-4	1	6.155*	3.786*	3.091*	2.642*	2.642*	1d

库存历史记录

3 个月趋势:

+0.00%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2020-08-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGW50H65DFB2-4 的描述。

STGW50 Series 650 V 50 A Through Hole High Speed IGBT - TO-247-4

Future Electronics

Trans IGBT Chip N-CH 650V 86A 272W 4-Pin(4+Tab) TO-247 Tube

Verical

Insulated Gate Bipolar Transistor, 86A I(C), 650V V(BR)CES, N-Channel, TO-247

IHS

IGBT, 86 A, 1.55 V, 272 W, 650 V, TO-247, 4 Pins

Avnet

IGBT TRENCH FS 650V 86A TO-247-4

DigiKey

TO247-4 IGBT 50A 650V HB2 SERI

Anglia

TRENCH GATE FIELD-STOP, 650 V, 5

Vigor Components

IGBT, SINGLE, 650V, 86A, TO-247; Continuous Collector Current:86A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:272W; Collector Emitter Voltage Max:650V; No. of Pins:4Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Newark