STMicroelectronics STGW40S120DF3

Name: STMicroelectronics STGW40S120DF3
Brand: STMicroelectronics
SKU: STGW40S120DF3

Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Avnet	STGW40S120DF3	0	600							22h
Farnell	STGW40S120DF3	0	1		12.124*	9.809*	8.518*	6.472*	6.472*	20h
Component Stockers USA	STGW40S120DF3	408			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	WS-STGW40S120DF3	14,000	5			11.766	7.844	7.844	7.844	21h
Worldway Electronics	STGW40S120DF3	6,058	7	Tube		6.884	6.754	6.494	6.364	21h

数据表和文档

下载 STMicroelectronics STGW40S120DF3 的数据表和制造商文档。

IHS

Datasheet18 页13 年前

Newark

供应链

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGW40S120DF3 的描述。

Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube

Verical

Trench gate field-stop IGBT, S series 1200 V, 40 A low drop

STMicroelectronics

STMICROELECTRONICS STGW40S120DF3 IGBT, SINGLE, 1.2KV, 80A, TO-247-3

Fly-Wing Technology

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247

IHS

IGBT 1200V 40A TO247 / Low thermal resistance

Win Source

IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of

Farnell