STMicroelectronics STGW40H65DFB

Name: STMicroelectronics STGW40H65DFB
Brand: STMicroelectronics
SKU: STGW40H65DFB

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

$ 1.296

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min
Avnet	2	45AC7605	72	1	3.850	2.400	2.400	2.120	1.790	3h
Newark		STGW40H65DFB	72	1	3.850	2.400	2.400	2.120	1.790
Arrow Electronics	2	STGW40H65DFB	310	1	3.295	1.881	1.354	1.354	1.354
Verical		STGW40H65DFB	306	6		1.878	1.353	1.255	1.149
TME	2	STGW40H65DFB	204	1	3.050	2.230	1.810	1.720	1.720	23h

数据表和文档

下载 STMicroelectronics STGW40H65DFB 的数据表和制造商文档。

Future Electronics

Datasheet17 页9 年前

Datasheet11 页13 年前

Datasheet17 页13 年前

Farnell

TME

库存历史记录

3 个月趋势:

+3.06%

CAD 模型

从我们值得信赖的合作伙伴处下载 STMicroelectronics STGW40H65DFB 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-03-12

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGW40H65DFB 的描述。

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

STMicroelectronics

Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-247 Tube

Verical

STGW40H65DFB, IGBT TRANSISTOR, 80 A 650 V, 3-PIN TO-247

RS (Formerly Allied Electronics)

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel

IHS

IGBT, 80 A, 1.6 V, 283 W, 650 V, TO-247, 3 Pins

Avnet

IGBT N-Ch 650V 40A High-Speed TO247

RS APAC

283W 80A 650V Trench Field Stop TO-247 IGBTs ROHS

Dasenic

IGBT TRENCH FS 650V 80A TO-247

DigiKey

TO247 IGBT 40A 650V TRENCH GAT

Anglia

IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:

Farnell