供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-28
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-02-04
LTD Date2016-08-04
相关零件
LittelfuseIXYH40N120C3D1
IGBT 1200V 64A 480W TO247 / IGBT 1200 V 64 A 480 W Through Hole TO-247 (IXTH)
International RectifierIRG7PH37K10D-EPBF
Trans IGBT Chip N-CH 1200V 45A 216000mW 3-Pin(3+Tab) TO-247AD Tube
描述
由其分销商提供的 STMicroelectronics STGW35NC120HD 的描述。
IGBT 1200V 60A 235W TO247 / IGBT 1200 V 60 A 235 W Through Hole TO-247-3
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247
Trans IGBT Chip N-CH 1.2KV 58A 3-Pin(3+Tab) TO-247
IGBTs Insulated Gate Bipolar Transistor PowerMESH IGBT
35 A - 1200 V - very fast IGBT
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Weight38.000013 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation220 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time152 ns
Turn-Off Delay Time275 ns
Turn-On Delay Time29 ns
Dimensions
Height21.09 mm
Length16.03 mm
Width5.16 mm