供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-17
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2019-09-15
LTD Date2020-03-15
描述
由其分销商提供的 STMicroelectronics STGW35HF60WD 的描述。
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
STGW35HF60WD Series 600 V 30 A Flange Mount Ultra Fast IGBT - TO-247
35 A, 600 V ultrafast IGBT with ultrafast diode
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time50 ns
Turn-Off Delay Time175 ns
Turn-On Delay Time30 ns
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm