供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-11-23
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
描述
由其分销商提供的 STMicroelectronics STGP4M65DF2 的描述。
Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(3+Tab) TO-220 Tube
Trench gate field-stop IGBT, M series 650 V, 4 A low loss
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 0.068uF 100volt X7S +/-10% Hi Rel
Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-220AB
IGBT, SINGLE, 650V, 8A, TO-220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 68W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals3
Technical
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current8 A
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Operating Temperature-55 °C
Number of Elements1