供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-13
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-02-04
LTD Date2016-08-04
描述
由其分销商提供的 STMicroelectronics STGP19NC60WD 的描述。
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220 Tube
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, N 600V 19A TO-220; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 125W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
IGBT, N 600V 19A TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:600V; Current Ic Continuous a Max:22A; Voltage, Vce Sat Max:2.5V; Power Dissipation:125W; Case Style:TO-220; Termination Type:Through Hole; ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current40 A
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Reverse Recovery Time31 ns
Rise Time7 ns
TerminationThrough Hole
Turn-Off Delay Time90 ns
Turn-On Delay Time25 ns