供应链
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-03-28
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-01-28
LTD Date2023-07-28
相关零件
STMicroelectronicsSTGP20V60DF
IGBT 600V 40A 167W TO220AB / IGBT Trench Field Stop 600 V 40 A 167 W Through Hole TO-220
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Trans IGBT Chip N-CH 600V 40A 165000mW Automotive 3-Pin(3+Tab) TO-247 Tube
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IGBT 600V 40A 160W TO247AD / Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(3+Tab) TO-247AC Tube
描述
由其分销商提供的 STMicroelectronics STGFW20V60DF 的描述。
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
Trans IGBT Chip N-CH 600V 40A 52000mW 3-Pin(3+Tab) TO-3PF Tube
STGFW20V60DF, IGBT Transistor, 40 A 600 V, 1MHz, 3-Pin TO-3P
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
TO-3PF IGBT Transistors / Modules ROHS
Igbt |Stmicroelectronics STGFW20V60DF
IGBT Transistors IGBT & Power Bipolar
52W 1.8V 600V 40A TO-3PF 15.7mm*5.7mm*26.7mm
IGBT TRENCH FS 600V 40A TO-3PF
TO-3PF IGBT 20A 600V TRENCH GA
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.961991 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current40 A
Max Operating Temperature175 °C
Max Power Dissipation86.7 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time40 ns
Schedule B8541290080
Dimensions
Height26.7 mm
Length15.7 mm
Width5.7 mm