STMicroelectronics STGD4M65DF2

Name: STMicroelectronics STGD4M65DF2
Brand: STMicroelectronics
SKU: STGD4M65DF2

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

$ 0.57

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Distributor		SKU		Min	Pkg
DigiKey	3	497-16963-1-ND	2,550	1	Cut Tape	1.620	1.025	0.682	0.488	0.488
TME	2	STGD4M65DF2	0	1		1.490	1.030	0.700	0.700	0.700	6h
Newark		STGD4M65DF2	0	1	Cut Tape	1.720	1.160	0.834	0.651	0.651
Avnet		STGD4M65DF2	0	2500						0.345	19h
Arrow Electronics		STGD4M65DF2	0	2500						0.349

数据表和文档

下载 STMicroelectronics STGD4M65DF2 的数据表和制造商文档。

STMicroelectronics

Datasheet20 页10 年前

Newark

库存历史记录

3 个月趋势:

-99.58%

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供应链

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 STMicroelectronics STGD4M65DF2 的描述。

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

STMicroelectronics

68W 8A 650V FS(Field Stop) TO-252-2(DPAK) IGBT Transistors / Modules ROHS

Digi-ic_SMART PIONEER

Trans IGBT Chip N-CH 650V 8A 68000mW 3-Pin(2+Tab) DPAK T/R

UnikeyIC

Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-252

IHS

M Series 650 V 8 A 68 W Surface Mount Trench Gate Field Stop IGBT - DPAK

Future Electronics

晶体管, IGBT, 650V, 8A, 175度 C, 68W;

element14 APAC

TRENCH GATE FIELD-STOP IGBT, M S

Jak Electronics

IGBT, 650V, 8A, 175DEG C, 68W;

Farnell

IGBT, SINGLE, 650V, 8A, TO-252; Continuous Collector Current:8A; Collector Emitter Saturation Voltage:1.6V; Power Dissipation:68W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Newark