STMicroelectronics STGB30H65DFB2
$ 0.974
Production
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-04-07
Lifecycle StatusProduction (Last Updated: 5 months ago)
描述
由其分销商提供的 STMicroelectronics STGB30H65DFB2 的描述。
Igbt, 650V, 50A, 167W, To-263 Rohs Compliant: Yes |Stmicroelectronics STGB30H65DFB2
Trench gate field-stop 650 V, 30 A high speed HB2 IGBT, D2PAK
Transistor IGBT Chip N-Channel 650V 30A 3-Pin D2PAK T/R
IGBT, SINGLE, 650V, 50A, TO-263; Continuous Collector Current:50A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:167W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals2
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Forward Current24 A
Forward Voltage1.8 V
Max Collector Current50 A
Max Operating Temperature175 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel