供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2007-12-25
LTD Date2008-06-25
描述
由其分销商提供的 STMicroelectronics STGB12NB60KDT4 的描述。
N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT | IGBT 600V 30A 125W D2PAK
IGBT 600V 30A 125W D2PAK
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 18 Amp
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)600 V
Current Rating18 A
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current30 A
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation125 W
Reverse Recovery Time80 ns
Rise Time14.5 ns
Voltage Rating (DC)600 V