供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-04-25
LTD Date2019-10-25
相关零件
STMicroelectronicsSTF10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package
STMicroelectronicsSTF10NM60ND
N-channel 600 V, 0.57 Ohm, 8 A, TO-220FP FDmesh(TM) II Power MOSFET
描述
由其分销商提供的 STMicroelectronics STF8NM60ND 的描述。
N-channel 600 V, 0.59 Ω, 7 A, FDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220FP Tube
600V 7A 700m´Î@10V3.5A 25W 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
N-CHANNEL 600 V, 0.59 OHM , 7 A, TO-220FP FDMESH II POWER MOSFET Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance560 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation25 W
Rds On Max700 mΩ
Rise Time22 ns
Turn-Off Delay Time37 ns
Turn-On Delay Time9 ns